PART |
Description |
Maker |
K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
PC48F4400P0VB0EE PC48F4400P0VB0EF RC28F256P30BFE R |
256Mb and 512Mb (256Mb/256Mb), P30-65nm 256Mb and 512Mb (256Mb/256Mb), P30-65nm
|
Micron Technology
|
HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM 256 MBit Synchronous DRAM 256兆位同步DRAM 256M (16Mx16) PC133 3-3-3 256Mb (32Mx8) FBGA PC133 3-3-3 256Mb (16Mx16) FBGA PC133 3-3-3 256Mb (64Mx4) PC133 3-3-3 256Mb (64Mx4) FBGA PC133 3-3-3 256 MBit Synchronous DRAM
|
Infineon Technologies AG Infineon Technologies A...
|
KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2 From old datasheet system 1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
EM484M1684VBA-7FE EM484M1684VBA-75FE EM484M1684VBA |
256Mb (4MBank6) Synchronous DRAM 256Mb (4M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank 512MB (64Mx72) PC2100 2-bank 512MB (64Mx64) PC2100 2-bank 512MB (64Mx72) PC1600 2-bank 256MB (32Mx72) PC1600 1-bank End-of-Life 512MB (64Mx64) PC1600 2-bank 12MB的(64Mx64)PC1600 2银行 256MB (32Mx72) PC2100 1-bank 56MB的(32Mx72)PC2100 1银行
|
Infineon Technologies AG
|
K4H561638D-TC_LB0 K4H560838D-TC_LA0 K4H560838D-TC_ |
256MB
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
NT256D64S88AAG |
256MB DIMM
|
Nanya Technology
|
K8A56EBC K8A57EBC K8A57EZC |
256Mb C-die NOR FLASH
|
Samsung semiconductor
|
NT256S72V89A0G |
256MB SDRAM Module
|
Nanya Technology
|